130 nm BiCMOS技术的EMI免疫PAM4发射机

M. Choudhary, Naga Surya Anjan Kumar Pudi, Jean-Michel Redouté, M. Baghini
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引用次数: 1

摘要

本文介绍了一种PAM4(脉冲调幅)发射机系统的设计,它比传统的设计具有更高的抗电磁干扰能力。研究了传统的PAM4发射机的电磁干扰效应。提出的PAM4发射机使用一个跨阻放大器(TIA)来隔离电磁干扰对PAM4发射机的影响。TIA采用共模反馈(CMFB),最大限度地减少了由于电磁干扰注入引起的传输线上共模电压的变化。仿真结果表明,所提出的PAM4发射机结构能够在12.5 Gbps的数据速率下,按照标准IEEE802.3bs保持80 mV的最小眼开度。该发射机功率为5mw,频率范围为1mhz至1ghz,在电磁干扰下可以有效地传输数据,而传统的PAM4发射机在电磁干扰下完全丢失数据。这款抗EMI PAM4发射机采用意法半导体130纳米BiCMOS技术设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An EMI Immune PAM4 Transmitter in 130 nm BiCMOS Technology
This paper presents the design of a PAM4 (pulse amplitude modulation) transmitter system, which demonstrates higher EMI (electromagnetic interference) immunity over traditional designs. The traditional PAM4 transmitter is investigated for the EMI effects. The proposed PAM4 transmitter uses a transimpedance amplifier (TIA) to isolate the effect of EMI on the PAM4 transmitter. TIA uses common mode feedback (CMFB), which minimises the variation caused in common mode voltage on the transmission line due to EMI injection. Simulation results show that the proposed PAM4 transmitter structure is able to maintain a minimum eye opening of 80 mV as per the standard IEEE802.3bs at a data rate of 12.5 Gbps. The proposed transmitter efficiently transmits the data in the presence of EMI with power of 5 mW and frequency ranging from 1 MHz to 1 GHz, whereas the traditional PAM4 transmitter exhibits complete loss of data in presence of EMI. This EMI immune PAM4 transmitter is designed in STMicroelectronics 130 nm BiCMOS technology.
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