扩展片上硅拉曼激光器至2.2 μm

2022 IEEE Photonics Conference (IPC) Pub Date : 2022-11-01 DOI:10.1109/IPC53466.2022.9975519

Mohammad Ahmadi, Jacques Lefebvre, Simon Levasseur, N. Landry, Wei Shi, S. Larochelle

{"title":"扩展片上硅拉曼激光器至2.2 μm","authors":"Mohammad Ahmadi, Jacques Lefebvre, Simon Levasseur, N. Landry, Wei Shi, S. Larochelle","doi":"10.1109/IPC53466.2022.9975519","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of a Raman laser in a sub-micron silicon-on-insulator waveguide operating above 2 μm. Lasing at 2.2 μm is obtained with a 0.7 μW output power. The laser efficiency is limited by the high signal loss.","PeriodicalId":202839,"journal":{"name":"2022 IEEE Photonics Conference (IPC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extending on-chip silicon Raman lasers to 2.2 μm\",\"authors\":\"Mohammad Ahmadi, Jacques Lefebvre, Simon Levasseur, N. Landry, Wei Shi, S. Larochelle\",\"doi\":\"10.1109/IPC53466.2022.9975519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first demonstration of a Raman laser in a sub-micron silicon-on-insulator waveguide operating above 2 μm. Lasing at 2.2 μm is obtained with a 0.7 μW output power. The laser efficiency is limited by the high signal loss.\",\"PeriodicalId\":202839,\"journal\":{\"name\":\"2022 IEEE Photonics Conference (IPC)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Photonics Conference (IPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPC53466.2022.9975519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPC53466.2022.9975519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了在亚微米绝缘体上硅波导中工作在2 μm以上的拉曼激光器的首次演示。输出功率为0.7 μW，激光波长为2.2 μm。高的信号损耗限制了激光的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Extending on-chip silicon Raman lasers to 2.2 μm

We report the first demonstration of a Raman laser in a sub-micron silicon-on-insulator waveguide operating above 2 μm. Lasing at 2.2 μm is obtained with a 0.7 μW output power. The laser efficiency is limited by the high signal loss.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE Photonics Conference (IPC)

自引率

0.00%

发文量