基于改进GDI方法的低功耗数字设计

P. Balasubramanian, J. John
{"title":"基于改进GDI方法的低功耗数字设计","authors":"P. Balasubramanian, J. John","doi":"10.1109/DTIS.2006.1708713","DOIUrl":null,"url":null,"abstract":"GDI (gate diffusion input) based technique for low power combinational logic circuit design has been elaborately discussed and the advantage of this design style over static CMOS (SC) implementation and pass-transistor logic (PTL), with regard to power consumption, delay and area complexity is also described in recent literature (Morgenshtein, 2002). In this paper, we propose a couple of new GDI based cell designs, which are found to be much more power efficient in comparison with existing GDI based cell functionality. The significance of these designs is substantiated by the simulation results obtained for a 0.35 muM TSMC CMOS technology, where an improvement in power efficiency of the order of 2-3times is reported in the pre-layout stage for some widely used important digital arithmetic circuits","PeriodicalId":399250,"journal":{"name":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"Low power digital design using modified GDI method\",\"authors\":\"P. Balasubramanian, J. John\",\"doi\":\"10.1109/DTIS.2006.1708713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GDI (gate diffusion input) based technique for low power combinational logic circuit design has been elaborately discussed and the advantage of this design style over static CMOS (SC) implementation and pass-transistor logic (PTL), with regard to power consumption, delay and area complexity is also described in recent literature (Morgenshtein, 2002). In this paper, we propose a couple of new GDI based cell designs, which are found to be much more power efficient in comparison with existing GDI based cell functionality. The significance of these designs is substantiated by the simulation results obtained for a 0.35 muM TSMC CMOS technology, where an improvement in power efficiency of the order of 2-3times is reported in the pre-layout stage for some widely used important digital arithmetic circuits\",\"PeriodicalId\":399250,\"journal\":{\"name\":\"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2006.1708713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2006.1708713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41

摘要

基于GDI(门扩散输入)的低功耗组合逻辑电路设计技术已经被详细讨论过,并且在最近的文献中也描述了这种设计风格相对于静态CMOS (SC)实现和通管逻辑(PTL)在功耗、延迟和面积复杂性方面的优势(Morgenshtein, 2002)。在本文中,我们提出了几个新的基于GDI的电池设计,与现有的基于GDI的电池功能相比,它们的功率效率要高得多。对0.35 muM TSMC CMOS技术的仿真结果证实了这些设计的意义,其中一些广泛使用的重要数字运算电路在预布局阶段的功率效率提高了2-3倍
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power digital design using modified GDI method
GDI (gate diffusion input) based technique for low power combinational logic circuit design has been elaborately discussed and the advantage of this design style over static CMOS (SC) implementation and pass-transistor logic (PTL), with regard to power consumption, delay and area complexity is also described in recent literature (Morgenshtein, 2002). In this paper, we propose a couple of new GDI based cell designs, which are found to be much more power efficient in comparison with existing GDI based cell functionality. The significance of these designs is substantiated by the simulation results obtained for a 0.35 muM TSMC CMOS technology, where an improvement in power efficiency of the order of 2-3times is reported in the pre-layout stage for some widely used important digital arithmetic circuits
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