GaAs FET器件和基于FET的功率放大电路的非线性和记忆特性

J. Santiago, J. Portilla, T. Fernandez
{"title":"GaAs FET器件和基于FET的功率放大电路的非线性和记忆特性","authors":"J. Santiago, J. Portilla, T. Fernandez","doi":"10.1109/EMICC.2006.282760","DOIUrl":null,"url":null,"abstract":"An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits\",\"authors\":\"J. Santiago, J. Portilla, T. Fernandez\",\"doi\":\"10.1109/EMICC.2006.282760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

本文对器件级和功放级的非线性效应和记忆效应进行了实验研究。由器件本身产生的影响已与功率放大器设计中引入特定偏置和匹配网络所引起的影响隔离开来。通过实验确定了偏置和匹配网络拓扑对功率放大器的非线性、短期和长期记忆行为的影响。这些测量结果与不同原型晶体管漏极阻抗的模拟有关。最后,对无记忆放大器的设计提出了一些指导原则
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits
An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted
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