{"title":"GaAs FET器件和基于FET的功率放大电路的非线性和记忆特性","authors":"J. Santiago, J. Portilla, T. Fernandez","doi":"10.1109/EMICC.2006.282760","DOIUrl":null,"url":null,"abstract":"An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits\",\"authors\":\"J. Santiago, J. Portilla, T. Fernandez\",\"doi\":\"10.1109/EMICC.2006.282760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits
An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted
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