一种用于深亚微米技术信号完整性表征的微电子测试结构

F. Caignet, S. Dhia, E. Sicard
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引用次数: 1

摘要

在高速电子电路中,特征尺寸减小所带来的好处受到互连的寄生效应增加的限制。本文详细介绍了片上时域技术在表征深亚微米技术中沿互连的传播延迟、串扰和串扰诱发延迟方面的应用。详细介绍了测量系统,以及信号完整性模式及其在0.18 CMOS技术上的实现。给出了用该技术得到的测量结果,并与仿真结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A microelectronic test structure for signal integrity characterization in deep submicron technology
The benefits expected by the decreases of feature sizes in high-speed electronic's circuits are limited by the increased parasitic effects of interconnect. This paper details the application of an on-chip time domain technique to the characterization of propagation delay, crosstalk and crosstalk-induced delay, along interconnects in deep submicron technology. The measurement system is detailed, together with the signal integrity patterns and their implementation in 0.18 CMOS technology. Measurement obtained with this technique are presented and compared with simulations.
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