主动漏源/源应力问题导致40nm甜甜圈扫描失败

2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2019-05-01 DOI:10.1109/ASMC.2019.8791778

Wen Bin Low, James Lai, Liang Chun Sung

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引用次数: 0

摘要

40nm器件存在甜甜圈扫描仓故障并导致成品率损失，这些故障尤其发生在具有高vt nMOSFET (HVTN)内核的器件中。这些故障主要是由HVTN制造工艺和有源(RX)层设计两个因素共同造成的。研究表明，减少RX CD和在HVTN工艺步骤中引入N2植入物有助于降低产量损失。

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40nm Donut Scan Failed Induced by Active Drain/Source Stress Issue

40nm devices suffered donut scan bin failure and result in yield loss, and these failures are particularly occurs in devices with high-Vt nMOSFET (HVTN) cores. These failures are mainly caused by combination of two factors: HVTN manufacturing process and Active (RX) layer design. Based on studies, reduce the RX CD and introduction of N2 implant in HVTN process step help to reduce yield loss.

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2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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