Study of perovskite-based self-driving photodetectors with Schottky junction configuration

Self-driving photodetectors have attracted much attention due to the advantages of the small size, low power consumption, maintenance-free. Although there are many researches on asymmetric self-driving photodetectors, most of them focus on the experimental control of materials and geometry, and lack of systematic theoretical research on the modulation mechanism of the device performance. Here, by coupling the electromagnetic response and the dynamics of semiconductor carriers via finite element method, we take perovskite as an example to systematically and detailedly explore the effects of the asymmetric Schottky barrier and doping concentration of the semiconductor on the response performance of the device from internal perspectives such as the distribution of the internal potential. It is found that a high doping concentration leads to the low short-circuit current and open-circuit voltage of the self-driving photodetector. Through the optoelectronic simulation and optimization, the MAPbI3-based self-driving photodetector with Au/Ag Schottky-junction shows excellent photoelectric performance at a wide spectral range (300 – 800 nm). It shows a high responsivity of 0.35 A/W and a specific detectivity of (5$\times$10)10 Jones under the 700 nm-wavelength illumination.