混合DBPPV-CdSe/ZnS量子点发光二极管的制备与表征

Chun-Yuan Huang, Ying-Chih Chen, H. Yu, Y. Su, T. Wen, Tzung‐Fang Guo
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引用次数: 0

摘要

我们展示了用2,3-二丁氧基- 1,4 -聚苯乙烯-乙烯烯(DBPPV)和CdSe/ZnS核/壳量子点(QDs)的发射复合薄膜制备和表征单层杂化聚合物-量子点发光二极管(pqd - led)。电学和光学特性受发射层厚度的显著影响。当复合膜厚度减薄至103 nm左右时,在9.6 V和7.6 V下,复合膜的最大亮度可达4100 cd/m2,最大发光效率为1.35 cd/A。然而,电致发光光谱显示,发射贡献主要来自DBPPV。量子点与DBPPV的最大发射强度之比约为38%,表明量子点的贡献较小。此外,还研究了后退火对器件性能的影响。与之前的报道相比,退火后没有明显的改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes
We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38 %, which indicates the contribution of QDs is minor. In addition, the post- annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.
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