一种适用于3Gbps 512Mb GDDR3 SDRAM的低功耗宽锁定数字DLL

Won-Joo Yun, Hyun-Woo Lee, Young-Ju Kim, Won-Jun Choi, Sang-Hoon Shin, Hyang-Hwa Choi, Hyeng-Ouk Lee, Shin-Deok Kang, Hyong-Uk Moon, S. Kwack, Dong-Uk Lee, Jung-Woo Lee, Young-Kyoung Choi, N. Park, KiChang Kwean, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, J. Kih, Ye-Seok Yang
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引用次数: 5

摘要

提出了一种低功耗、低成本、高性能的宽锁定范围的寄存器控制数字延时锁相环。DLL具有双回路,单复制块,占空比校正增强控制器(DCCEC),智能掉电控制器(SPDC),用于减少掉电时的待机电流,锁定范围加倍器,用于宽锁定范围。用于3gbps 512 Mb GDDR3 SDRAM的数字DLL采用80 nm DRAM工艺制造。实验结果表明,在外部占空误差为5%的情况下,占空校正小于plusmn1%,锁定时间小于400个周期,工作频率为1.5 GHz,工作频率为1.9 V,锁定范围为50 MHz ~ 1.5 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low Power Digital DLL with Wide Locking Range for 3Gbps 512Mb GDDR3 SDRAM
A new low power, low cost and high performance register-controlled digital delay locked loop with wide locking range is presented. The DLL has dual loops with single replica block, duty cycle correction enhance controller (DCCEC), smart power down controller (SPDC) for reducing the standby current during power down, and locking range doubler for wide locking range. The digital DLL used for 3 Gbps 512 Mb GDDR3 SDRAM is fabricated using an 80 nm DRAM Process. Experimental results show less than plusmn1% duty correction from external duty error of plusmn5%, less than 400 cycle locking time, 1.5 GHz operation frequency at 1.9 V, and a wide locking range from 50 MHz to 1.5 GHz.
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