{"title":"在180nm CMOS中集成1mm光电二极管的高速POF接收器","authors":"F. Tavernier, M. Steyaert","doi":"10.1109/ECOC.2010.5621473","DOIUrl":null,"url":null,"abstract":"The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.","PeriodicalId":391144,"journal":{"name":"36th European Conference and Exhibition on Optical Communication","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A high-speed POF receiver with 1 mm integrated photodiode in 180 nm CMOS\",\"authors\":\"F. Tavernier, M. Steyaert\",\"doi\":\"10.1109/ECOC.2010.5621473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.\",\"PeriodicalId\":391144,\"journal\":{\"name\":\"36th European Conference and Exhibition on Optical Communication\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"36th European Conference and Exhibition on Optical Communication\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECOC.2010.5621473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"36th European Conference and Exhibition on Optical Communication","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECOC.2010.5621473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-speed POF receiver with 1 mm integrated photodiode in 180 nm CMOS
The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.
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