{"title":"石纹缺陷和边缘粗糙度对石墨烯纳米带fet开关和频率性能的影响","authors":"A. Saha, G. Saha, A. Harun-ur Rashid","doi":"10.1109/ICECE.2014.7026932","DOIUrl":null,"url":null,"abstract":"The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×103 nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of stone-wales defects and edge roughness on the switching and frequency performance of graphene nanoribbon-FET\",\"authors\":\"A. Saha, G. Saha, A. Harun-ur Rashid\",\"doi\":\"10.1109/ICECE.2014.7026932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×103 nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.\",\"PeriodicalId\":335492,\"journal\":{\"name\":\"8th International Conference on Electrical and Computer Engineering\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Conference on Electrical and Computer Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE.2014.7026932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Conference on Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2014.7026932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of stone-wales defects and edge roughness on the switching and frequency performance of graphene nanoribbon-FET
The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×103 nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
