压电型铌酸锂-钽酸钾单晶的生长

M. Adachi, K. Takeuchi, T. Karaki
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引用次数: 0

摘要

利用TSSG技术,在浅温度梯度条件下,成功地从富钾熔体中生长出(K,Li)NbO3单晶。在拟立方相中沿¿100¿方向生长。晶体被允许从10 ~ 30小时左右横向生长以获得所需的横截面。当熔体冷却时,生长的晶体以约4mm/h的速度上升到熔体表面以上或间歇性上升。(K,Li)NbO3的相变温度分别为457℃和220℃。缓慢冷却完全消除了两个相变点的开裂。通过介电测量来检验极化的完整性。极化后,介电常数降至150左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of potassium lithium niobate-tantalate single crystal for piezoelectric applications
(K,Li)NbO3 single crystals were successfully grown from a melt with potassium enriched composition under the condition of shallow temperature gradient using the TSSG technique. The growth was along the ¿100¿ direction in the pseudo-cubic phase. The crystal was allowed to grow laterally from around 10¿30h to obtain the cross section desired. The growing crystal was then lifted up above the melt surface or lifted intermittently at the rate of about 4mm/h, while the melt was cooled. Cracking occurred at the phase transition temperatures of 457 and 220°C for (K,Li)NbO3. Slow cooling fairly eliminated the cracking at the both phase transition points. The completeness of the poling was checked by the dielectric measurements. After poling, the dielectric constant reduced to be around 150.
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