1.3μm InAs/InGaAs量子点VCSELs的高速调制研究

2009 2nd IEEE International Conference on Broadband Network & Multimedia Technology Pub Date : 2009-12-04 DOI:10.1109/ICBNMT.2009.5347816

C. Tong, D.W. Xu, S. Yoon, Y. Ding, W. Fan

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引用次数: 1

摘要

通过全通路速率方程的小信号分析，研究了量子点密度、均匀性和层数对1.3μm InAs-InGaAs QD VCSELs 3dB带宽的影响。给出了带宽对量子点密度的依赖关系。证明了带宽与量子点均匀性的线性关系。预测了发射波长为1.3μm的QD VCSEL的高速运行(> 10GHz)。

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Investigation of high-speed modulaiton of 1.3μm InAs/InGaAs quantum dot VCSELs

The influence of quantum dot (QD) density, uniformity and layer number on the 3dB bandwidth of 1.3μm InAs-InGaAs QD VCSELs is investigated by the small signal analysis of all-pathway rate equations. The dependence of bandwidth on the QD density is shown. Linearly dependence of bandwidth on the QD uniformity is demonstrated. High speed operation (> 10GHz) of QD VCSEL emitting at 1.3μm is predicated.

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2009 2nd IEEE International Conference on Broadband Network & Multimedia Technology

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