采用BCB以上SiGe BiCMOS晶圆工艺设计122 GHz贴片天线,用于片上系统应用

R. Wang, Yaoming Sun, M. Kaynak, J. Borngräber, B. Goettel, S. Beer, C. Scheytt
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引用次数: 11

摘要

以苯并环丁烯(BCB)为介质层,在SiGe BiCMOS晶圆上设计并制造了两个半波长122 GHz贴片天线。它可以将毫米波收发电路和天线完全集成在单个芯片上,从而简化毫米波频率下的封装程序,从而降低成本。两个贴片天线的馈电方式不同,即微带传输线直接馈电和近耦合馈电。它们表现出类似的性能,并在非常有限的芯片面积内提供设计电路和天线之间互连(馈线路由)的灵活性。在122.5 GHz (ISM频段122-123 GHz的中心频率)下,两种设计的测量增益均为3.4 dBi,模拟效率约为50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
122 GHz patch antenna designs by using BCB above SiGe BiCMOS wafer process for system-on-chip applications
Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.
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