微芯片在锐边图案上混合微装配的实验研究

Bo Chang, Ali Shah, Quan Zhou
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引用次数: 0

摘要

本文研究了300 μm (L) × 300 μm (W) × 50 μm (H)微芯片在不同边缘高度的锐边图案上的混合微组装。混合微装配结合了机器人拾取技术和基于液滴表面张力驱动的自组装技术,其中机器人拾取搬运工具用于粗定位,液滴自组装技术用于高精度自对准。液体在图案外的扩散导致自对准失败。根据吉布斯不等式,固体表面上的锋利边缘可以增强接触线的固定,从而抑制液体的扩散。具有锋利边缘特征的拓扑图案可以用作表面张力驱动的自对准的受体位点。然而,关于锐边高度如何影响自对准过程的研究很少。本文制备了5种不同边缘高度(60 nm、130 nm、264 nm、540 nm和1036 nm)的锐边拓扑图案,并进行了水测试,以研究边缘高度对混合微组件的影响。实验结果表明,边缘高度对接触线固定和自对准过程都有影响。水滴可以成功地钉住高于264 nm的图案边缘。当初始放置误差小于150 μm时,对于边缘高度为1 μm的图案,自对准成功率可达100%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental investigation on hybrid microassembly of microchips on sharp edged patterns
This paper studies the hybrid microassembly of 300 μm (L) × 300 μm (W) × 50 μm (H) microchips on sharp edged patterns with different edge heights. Hybrid microassembly combines the robotic pick-and-place technique and the droplet based surface tension driven self-assembly technique, where the robotic pick-and-place handling tool is used for coarse positioning and the droplet self-assembly technique is used for high-accuracy self-alignment. Spreading of the liquid outside the pattern leads to failure in self-alignment. Sharp edge on a solid surface is known for enhancing contact line pinning according to Gibbs inequalities, and therefore inhibit spreading of the liquid. Topological patterns featured with the sharp edge can be used as the receptor site for surface tension driven self-alignment. However, there is little study on how the height of the sharp edge affects the self-alignment process. In this paper, sharp edged topological patterns with five different edge heights: 60 nm, 130 nm, 264 nm, 540 nm and 1036 nm, have been fabricated and tested with water to investigate the influence of the edge height on the hybrid microassembly. The experimental results indicate the edge height affects both the contact line pinning and the self-alignment process. Water droplet can successfully pin at the edge of patterns higher than 264 nm. Self-alignment can reach 100% success rate on the patterns with edge height of 1 μm when the initial placement error is below 150 μm.
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