电感耦合螺旋等离子体中无电流双层(CFDL)上游和下游的高能电子

L. Buschmann, N. Gulbrandsen, Å. Fredriksen
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引用次数: 0

摘要

cfdl是一种在磁场不断扩大的螺旋等离子体源中,可以在没有外部电流强迫的情况下形成自一致的急剧电位下降。电势下降通常发生在源和扩散室之间的过渡中,因此,在CFDL的下游区域可以观察到离子束。由于没有外加电流,自由电子在平衡离子束电流中起着重要的作用。为了更好地理解这一作用,重要的是获得有关电子及其能量分布以及离子的信息。本文报道了在CFDL的上游和下游区域测量Njord装置的电感耦合螺旋等离子体中的离子能量分布和电子的高能尾。测量分别通过离子和电子收集的减速场能量分析仪(RFEA)进行。在电子收集模式下,可以检测到能量大到足以克服探针接地孔径和等离子体势Vp之间势垒的电子。在先前的实验[1]中,在CFDL的下游区域发现了高能电子群,最明显的是在磁力线从源的外径向区域映射到下游径向位置,在那里它们与径向移动的探针相交。在这里发现了温度约为10 eV的高密度高能量种群。这个电子种群起源于源区,在那里电子在射频场中被直接加热,它们的能量足以穿过电位下降并电离下游原子,从而引起等离子体密度的小幅增加。然而,在离子束所在的区域内,也观察到一个甚至更高能量的电子的脆弱平台。另一方面,到达RFEA收集器的体电子尾部的温度为5-6 eV,与Langmuir探针的结果一致。在最近的实验中,对等离子体源(上游区域)的离子和电子分布进行了全面的二维测量。在源区,Vp通常约为70 V,与下游区域的等离子体电位约为50 V相比,该区域的电子势垒更高。然而,电子仍然可以被检测到,但温度约为10电子伏特。这些电子的密度在柱中心外> 3cm的最低等离子体电位区域出现最高,这是由于施加在电子上的较低势垒所预期的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energetic electrons upstream and downstream of a current-free double layer (CFDL) in an inductively coupled helicon plasma
CFDLs are sharp potential drops that can form self-consistently without external current forcing, in helicon plasma sources with an expanding magnetic field. The potential drop typically occurs in the transition between the source and the diffusion chamber, and as a result, an ion beam can be observed in the downstream region of the CFDL. As no external current is applied, the free electrons have to play an important role in balancing the ion beam current. To better understand this role, it is important to obtain information about the electrons and their energy distribution as well as that of the ions. We report on the measurements of the ion energy distributions and high-energy tail of electrons in the inductively coupled helicon plasma of the Njord device, in both upstream and downstream regions of the CFDL. The measurements were carried out by means of a retarding field energy analyzer (RFEA) set to ion and electron collection, respectively. In the electron collection mode, electrons with energies large enough to overcome the potential barrier between the grounded aperture of the probe and the plasma potential Vp can be detected. In a former experiment [1] a high-energy population of electrons in the downstream region of the CFDL was found, most pronounced at the magnetic field lines mapping from the outer radial region of the source onto the downstream radial position where they intersect the radially moving probe. Here a high-density and high-energy population at temperatures about 10 eV was found. This electron population originates in the source region where electrons are directly heated in the RF field, and they are energetic enough to cross the potential drop and ionize the downstream atoms, giving rise to a small increase in the plasma density. However, also a tenuous plateau of even higher energy electrons was observed within the region where the ion beam. On the other hand, the tail of the bulk electrons that reached the RFEA collector had temperatures of 5–6 eV, in agreement with Langmuir probe results. In more recent experiments, comprehensive 2D measurements in the plasma source (upstream region) of the ion and electron distributions were obtained. In the source, Vp is typically about 70 V, which presents a taller potential barrier for electrons than in the downstream region, where the plasma potential is around 50 V. However, electrons could still be detected, but with a temperature of about 10 eV. The density of these electrons appears highest in the regions of lowest plasma potential > 3 cm outside the center of the column, as is to be expected from the lower potential barrier imposed on the electrons.
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