通过基于模式的预测机制构建赛马场记忆预移位

Adrian Colaso, P. Prieto, Pablo Abad Fidalgo, J. Gregorio, Valentin Puente
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引用次数: 6

摘要

赛道存储器(RM)是一种很有前途的自旋电子技术,能够通过具有多畴的铁磁纳米线在单个单元(磁带状)中提供多比特存储。与CMOS存储器相比,该技术具有优越的密度、非易失性和低静态功耗。这些特性吸引了人们对采用RM作为RAM技术的替代品的极大兴趣,从主存储器(DRAM)到片上缓存层次结构(SRAM)。该技术的主要缺点之一是对存储在每个域中的比特进行序列化访问,导致访问时间不可预测。适当的标头管理策略可以潜在地减少访问正确位置所需的移位操作的数量。简单的策略,如在最后访问的域(或下一个)上保留读/写头,在数据访问中存在一定级别的局部性时,提供了足够的改进。然而,在那些局部性低得多的情况下,头管理策略中更准确的行为是可取的。在本文中,我们探讨了利用硬件预取策略来实现报头管理策略。“预测”下一个位移的长度和方向,可以减少移位操作,提高内存访问时间。我们的实验结果表明,使用适当的标头,我们的建议将L2和LLC的平均移位延迟减少了50%,将平均内存访问时间提高了10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Architecting Racetrack Memory Preshift through Pattern-Based Prediction Mechanisms
Racetrack Memories (RM) are a promising spintronic technology able to provide multi-bit storage in a single cell (tape-like) through a ferromagnetic nanowire with multiple domains. This technology offers superior density, non-volatility and low static power compared to CMOS memories. These features have attracted great interest in the adoption of RM as a replacement of RAM technology, from Main memory (DRAM) to maybe on-chip cache hierarchy (SRAM). One of the main drawbacks of this technology is the serialized access to the bits stored in each domain, resulting in unpredictable access time. An appropriate header management policy can potentially reduce the number of shift operations required to access the correct position. Simple policies such as leaving read/write head on the last domain accessed (or on the next) provide enough improvement in the presence of a certain level of locality on data access. However, in those cases with much lower locality, a more accurate behavior from the header management policy would be desirable. In this paper, we explore the utilization of hardware prefetching policies to implement the header management policy. "Predicting" the length and direction of the next displacement, it is possible to reduce shift operations, improving memory access time. The results of our experiments show that, with an appropriate header, our proposal reduces average shift latency by up to 50% in L2 and LLC, improving average memory access time by up to 10%.
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