一种新型高精度带隙差分共栅极参考元件

Chujun Lin, Hongying Chen, Weidong Xu, Fang Gao, Xin'an Wang
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引用次数: 1

摘要

采用优化的差分共门结构和级联放大器,提出了一种高精度、高电源抑制比的新型带隙基准(BGR)。电路采用标准的0.18 μm CMOS工艺。仿真结果表明,温度范围为-20℃~ 80℃,各工艺角温度系数(TC)均小于27 ppm/℃。线路稳压优于0.045%/V,低频电源抑制比接近56dB。该带隙基准的供电电压范围为1.8V ~ 3.5V,室温下最大供电电流为36μA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel high-precision bandgap reference with differential common-gate structure
This paper proposes a novel kind of bandgap reference (BGR) with high precision and high power supply rejection ratio (PSRR) by using optimized differential common-gate structure and a cascode amplifier. The circuit uses the standard 0.18 μm CMOS process. The simulation results indicate that the temperature range is -20°C to 80°C and the temperature coefficient (TC) less than 27 ppm/°C is achieved at all process corners. Line regulation is better than 0.045%/V and the power supply rejection ratio in low frequency is close to 56dB. The supply voltage of the proposed bandgap reference ranges from 1.8V to 3.5V while the maximum supply current is 36μA at room temperature.
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