{"title":"红外探测用锗硅微孔阵列垂直照明光电探测器的设计与制造","authors":"Bo-Rui Lai, Ching-Yu Hsu, Guan-Yu Li, Z. Pei","doi":"10.1109/SiPhotonics55903.2023.10141901","DOIUrl":null,"url":null,"abstract":"In this work, the Ge on Si vertical illuminated photodetector with the micro-hole array is designed and fabricated. The result of the simulation reveals a 180 % enhancement of the structure at 1.55 µm. The low dark current is 4.7E-10 A at -1 V.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Fabrication of Ge on Si Micro-Hole Array Vertical Illuminated Photodetector for Infrared Detection\",\"authors\":\"Bo-Rui Lai, Ching-Yu Hsu, Guan-Yu Li, Z. Pei\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the Ge on Si vertical illuminated photodetector with the micro-hole array is designed and fabricated. The result of the simulation reveals a 180 % enhancement of the structure at 1.55 µm. The low dark current is 4.7E-10 A at -1 V.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Fabrication of Ge on Si Micro-Hole Array Vertical Illuminated Photodetector for Infrared Detection
In this work, the Ge on Si vertical illuminated photodetector with the micro-hole array is designed and fabricated. The result of the simulation reveals a 180 % enhancement of the structure at 1.55 µm. The low dark current is 4.7E-10 A at -1 V.
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