透明氧化物半导体:最新材料发展和新应用

IEEE Photonic Society 24th Annual Meeting Pub Date : 2011-12-22 DOI:10.1109/PHO.2011.6110668

G. Herman, J. Rajachidambaram, M. Rajachidambaram, S. Han, C. Chang, S. Murali, J. F. Conley

{"title":"透明氧化物半导体:最新材料发展和新应用","authors":"G. Herman, J. Rajachidambaram, M. Rajachidambaram, S. Han, C. Chang, S. Murali, J. F. Conley","doi":"10.1109/PHO.2011.6110668","DOIUrl":null,"url":null,"abstract":"Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transparent oxide semiconductors: Recent material developments and new applications\",\"authors\":\"G. Herman, J. Rajachidambaram, M. Rajachidambaram, S. Han, C. Chang, S. Murali, J. F. Conley\",\"doi\":\"10.1109/PHO.2011.6110668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.\",\"PeriodicalId\":173679,\"journal\":{\"name\":\"IEEE Photonic Society 24th Annual Meeting\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonic Society 24th Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHO.2011.6110668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

非晶氧化物半导体主要作为有源矩阵显示和透明/柔性电子应用的薄膜晶体管的有源半导体材料进行了研究。本文将描述用于薄膜晶体管的印刷非晶氧化物半导体的最新成果，表面功能化的作用，以及这些材料在电阻随机存取存储器应用中的集成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transparent oxide semiconductors: Recent material developments and new applications

Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonic Society 24th Annual Meeting

自引率

0.00%

发文量