高效包络跟踪功率放大器的集成电路开发

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160168

P. Asbeck, L. Larson, D. Kimball, M. Kwak, M. Hassan, C. Hsia, C. Presti, A. Scuderi

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引用次数: 7

摘要

包络跟踪为下一代具有高峰值平均比信号(如LTE)的无线系统的功率放大器提供了实现高效率的潜力。低成本、高效率和宽带宽的包络调制器是ET广泛应用的关键因素。本报告回顾了用于基站PAs和手机PAs的ET应用的各种Si ic的发展。首先描述了对电压摆幅、带宽和精度的要求。基于BCD技术的包络调制器的Si集成电路实现高达50V的电压，用于LDMOS和GaN射频功率晶体管的基站。还讨论了用于无线手持设备的基于cmos的Si包络调制器集成电路。提出了在20MHz LTE手机应用中实现总效率高达45%的ET放大器。

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Si IC development for high efficiency envelope tracking power amplifiers

Envelope tracking provides the potential for achieving high efficiency in power amplifiers for next generation wireless systems with high peak-to-average ratio signals such as LTE. Envelope modulators with low cost, high efficiency and wide bandwidth are critical enablers for the widespread application of ET. This presentation reviews the development of various Si ICs for ET applications in basestation PAs and in handset PAs. Requirements of voltage swing, bandwidth, and accuracy are first described. BCD technology-based Si ICs for envelope modulators achieving voltages as high as 50V are presented, for operation in basestations with LDMOS and GaN RF power transistors. CMOS-based Si envelope modulator ICs for operation in wireless handsets are also discussed. ET amplifiers that achieve overall efficiency as high as 45% in 20MHz LTE handset applications are presented.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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