一个现场可编程的40纳米纯CMOS嵌入式内存宏使用PMOS反熔断器

Daichi Kaku, T. Namekawa, K. Matsufuji, O. Wada, H. Ito, Y. Sugisawa, Sakiko Shimizu, Takeshi Yamamoto, Kenji Honda, M. Hamada, K. Numata
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引用次数: 6

摘要

一个纯CMOS一次性可编程存储器(PCOP)宏使用PMOS反熔断器设计用于现场编程。在这项工作中,温控编程电压发生器(TVG)通过改善在−40°C至125°C的宽温度范围内的编程特性,以及±10%的电源电压变化,实现了现场编程。此外,存储单元的尺寸被优化并减少了40%,这也带来了更好的读取特性。PCOP容量为16kbit,采用1.1 v和3.3 v电源,占地0.224 mm,采用40 nm纯CMOS逻辑技术,采用薄、厚氧化膜晶体管实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A field programmable 40-nm pure CMOS embedded memory macro using a PMOS antifuse
A Pure CMOS One-time Programmable memory (PCOP) macro using a PMOS antifuse is designed for field programming. In this work, a Temperature-controlled programming Voltage Generator (TVG) realizes field programming by improving programming characteristics over a wide temperature range, from −40° C to 125° C, and supply voltage variations of ±10%. In addition, the memory cell dimensions are optimized and reduced by 40%, which also results in better reading characteristics. PCOP has a 16-Kbit capacity, uses 1.1-V and 3.3-V power sources, occupies 0.224 mm and is implemented in a 40-nm pure CMOS logic technology with thin and thick oxide film transistors.
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