一种用于HCl SOA增强的新型高压LDMOS屏蔽触点结构

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988966

Hsin-Liang Liu, Z. Jhou, Shih-Teng Huang, Shu‐Wha Lin, Ke-Feng Lin, Chiu-Te Lee, Chih-Chong Wang

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引用次数: 6

摘要

本文提出了一种新型的栅极连接屏蔽接触结构的LDMOS，不需要额外的掩模和工艺。TCAD模拟表明，该结构具有较低的电势和冲击电离。在实际硅上验证了Ron-sp/BVD比的降低和HCl SOA的显著改善。为了更好地控制过程，还研究了采用槽聚设计的新布局。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel high-voltage LDMOS with shielding-contact structure for HCl SOA enhancement

This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reduction and significant HCl SOA improvement have been verified on real Silicon. Newly layout with Slot-Poly design has been investigated for better process control as well.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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