基于纳米晶硅的金属氧化物半导体阴极的发射特性

2007 IEEE International Vacuum Electronics Conference Pub Date : 2007-05-15 DOI:10.1109/IVELEC.2007.4283287

H. Shimawaki, Y. Neo, H. Mimura

{"title":"基于纳米晶硅的金属氧化物半导体阴极的发射特性","authors":"H. Shimawaki, Y. Neo, H. Mimura","doi":"10.1109/IVELEC.2007.4283287","DOIUrl":null,"url":null,"abstract":"A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.","PeriodicalId":254940,"journal":{"name":"2007 IEEE International Vacuum Electronics Conference","volume":"246 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon\",\"authors\":\"H. Shimawaki, Y. Neo, H. Mimura\",\"doi\":\"10.1109/IVELEC.2007.4283287\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.\",\"PeriodicalId\":254940,\"journal\":{\"name\":\"2007 IEEE International Vacuum Electronics Conference\",\"volume\":\"246 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Vacuum Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVELEC.2007.4283287\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Vacuum Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVELEC.2007.4283287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光烧蚀技术制备了以纳米晶硅为基材的金属氧化物半导体阴极。发射电流和传输比对栅极的厚度很敏感。电子发射发生在萃取电压与顶电极的功函数一样低的地方。通过将厚度减小到5nm，传输率提高到4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon

A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE International Vacuum Electronics Conference

自引率

0.00%

发文量