高性能HBV增殖器单片集成到宿主石英衬底上

T. David, S. Arscott, J. Munier, T. Decoopman, T. Akalin, P. Mounaix, X. Mélique, O. Vanbésien, G. Beaudin, D. Lippens
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引用次数: 3

摘要

采用基于inp的异质结构势垒变容管(HBV)倍频器的全集成单片电路已经通过外延提升和转移衬底技术制造到石英衬底上。我们在288 GHz下获得了6mw的最大输出功率,相当于6%的总效率。此外,我们还观察到在恒定输入功率为70 mW的情况下,以300 GHz为中心的45 GHz 3db带宽。我们还报告了在鳍线技术中使用平滑波纹锥形部分进行模式匹配和滤波的乘法器块的设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance HBV multipliers monolithically integrated onto a host quartz substrate
Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding to an overall efficiency of 6%. In addition we have observed a 45 GHz 3 dB bandwidth centered around 300 GHz for a constant input power of 70 mW. We also report on the design of a multiplier block in a fin line technology making use of smoothly corrugated tapered sections for mode matching and filtering.
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