压力传感用高频SAW器件的研制

2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI:10.1109/CAS56377.2022.9934404

D. Vasilache, A. Nicoloiu, G. Boldeiu, I. Zdru, T. Kostopoulos, M. Nedelcu, A. Stavrinidis, C. Nastase, G. Stavrinidis, G. Konstantinidis, A. Dinescu, A. Müller

{"title":"压力传感用高频SAW器件的研制","authors":"D. Vasilache, A. Nicoloiu, G. Boldeiu, I. Zdru, T. Kostopoulos, M. Nedelcu, A. Stavrinidis, C. Nastase, G. Stavrinidis, G. Konstantinidis, A. Dinescu, A. Müller","doi":"10.1109/CAS56377.2022.9934404","DOIUrl":null,"url":null,"abstract":"The paper presents a successful demonstration of 0-level packaged SAW pressure sensors developed on GaN/Si thin membranes (1.3 μ m/ 10 μ m) with a backside Mo metallization (30 nm). FEM simulations were performed in order to predict the mechanical behavior of the membrane and of the package. One-port SAW devices having IDTs of 120 nm width were fabricated bye-beam nanolithography. High values of the sensitivity (1102 kHz/Bar) and of the pressure coefficient of frequency (126 ppm/Bar) have been obtained due to the very high frequency operation (8.7 GHz) of the SAW. An insignificant dropping of these values was obtained after the bonding of the capsule.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"25 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of high frequency SAW devices devoted for pressure sensing\",\"authors\":\"D. Vasilache, A. Nicoloiu, G. Boldeiu, I. Zdru, T. Kostopoulos, M. Nedelcu, A. Stavrinidis, C. Nastase, G. Stavrinidis, G. Konstantinidis, A. Dinescu, A. Müller\",\"doi\":\"10.1109/CAS56377.2022.9934404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a successful demonstration of 0-level packaged SAW pressure sensors developed on GaN/Si thin membranes (1.3 μ m/ 10 μ m) with a backside Mo metallization (30 nm). FEM simulations were performed in order to predict the mechanical behavior of the membrane and of the package. One-port SAW devices having IDTs of 120 nm width were fabricated bye-beam nanolithography. High values of the sensitivity (1102 kHz/Bar) and of the pressure coefficient of frequency (126 ppm/Bar) have been obtained due to the very high frequency operation (8.7 GHz) of the SAW. An insignificant dropping of these values was obtained after the bonding of the capsule.\",\"PeriodicalId\":380138,\"journal\":{\"name\":\"2022 International Semiconductor Conference (CAS)\",\"volume\":\"25 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS56377.2022.9934404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文成功演示了在背面Mo金属化(30 nm)的GaN/Si薄膜(1.3 μ m/ 10 μ m)上开发的0级封装SAW压力传感器。为了预测膜和包装的力学行为，进行了有限元模拟。采用光束纳米光刻技术制备了具有120 nm宽idt的单端口SAW器件。高灵敏度(1102 kHz/Bar)和高频率压力系数(126 ppm/Bar)是由于SAW的高频工作(8.7 GHz)。这些数值在胶囊粘接后没有显著下降。

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Development of high frequency SAW devices devoted for pressure sensing

The paper presents a successful demonstration of 0-level packaged SAW pressure sensors developed on GaN/Si thin membranes (1.3 μ m/ 10 μ m) with a backside Mo metallization (30 nm). FEM simulations were performed in order to predict the mechanical behavior of the membrane and of the package. One-port SAW devices having IDTs of 120 nm width were fabricated bye-beam nanolithography. High values of the sensitivity (1102 kHz/Bar) and of the pressure coefficient of frequency (126 ppm/Bar) have been obtained due to the very high frequency operation (8.7 GHz) of the SAW. An insignificant dropping of these values was obtained after the bonding of the capsule.

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2022 International Semiconductor Conference (CAS)

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