{"title":"片上共面传输线在硅衬底上的电容建模","authors":"R. Gordin, D. Goren","doi":"10.1109/SPI.2004.1409023","DOIUrl":null,"url":null,"abstract":"The paper presents a semi-analytical technique for modeling capacitance of on-chip coplanar transmission lines over conductive silicon substrate. The focus is put on developing expressions for high frequency capacitance which yield reasonable accuracy. The technique is based on the 2D approach and results in accurate and efficient expressions accounting for frequency dependent behavior of the silicon substrate, as well as for actual transmission lines geometry.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling capacitance of on-chip coplanar transmission lines over the silicon substrate\",\"authors\":\"R. Gordin, D. Goren\",\"doi\":\"10.1109/SPI.2004.1409023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a semi-analytical technique for modeling capacitance of on-chip coplanar transmission lines over conductive silicon substrate. The focus is put on developing expressions for high frequency capacitance which yield reasonable accuracy. The technique is based on the 2D approach and results in accurate and efficient expressions accounting for frequency dependent behavior of the silicon substrate, as well as for actual transmission lines geometry.\",\"PeriodicalId\":119776,\"journal\":{\"name\":\"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2004.1409023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2004.1409023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling capacitance of on-chip coplanar transmission lines over the silicon substrate
The paper presents a semi-analytical technique for modeling capacitance of on-chip coplanar transmission lines over conductive silicon substrate. The focus is put on developing expressions for high frequency capacitance which yield reasonable accuracy. The technique is based on the 2D approach and results in accurate and efficient expressions accounting for frequency dependent behavior of the silicon substrate, as well as for actual transmission lines geometry.