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引用次数: 0
摘要
SiC IGBT、MOSFET等宽禁带电力电子器件由于具有较高的DV / dt和di / dt，其高频干扰一直是人们关注的焦点，但开关电源对周围一些器件所产生的传导EMI更受关注。本文为了分析由SiC MOSFET组成的逆变器输出后电缆中交流电源周围的场强变化，根据SiC驱动板的实际电磁辐射实验场景，在CST电缆工作室建立物理模型进行场路联合仿真，分析不同距离下的场强变化。
Simulation Analysis of Electromagnetic Radiation of Inverter Cable
Due to the high DV / dt and di / dt of wide bandgap power electronic devices such as SiC IGBT and MOSFET, their high frequency interference has always been the focus of attention, but more attention is paid to the conducted EMI caused by switching power supply to some devices around. In this paper, in order to analyze the field strength changes around the AC power in the cable after the output of the inverter composed of SiC MOSFET, according to the actual electromagnetic radiation experimental scene of the SiC drive board, a physical model is built in CST cable studio for field circuit joint simulation, and the field strength change at different distances are analyzed.
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