Dielectric Materials in Organic Thin Film Transistors

This work focuses on dielectric materials in organic thin film transistors. Silicon oxides whose surfaces are modified with hexamethyldisilazane (HMDS) and octyltriethoxylSilane (OTS) are investigated. Organic semiconducting materials are used in the transistors made within the scope of this work. Although the devices made using our procedures did not exhibit satisfactory performance, we explored and understood some chemical and engineering aspects of the relevant dielectric/semiconductor interfaces in organic thin film transistors. Understanding these systems would help with improvements of the electrical properties and performance of such systems when plastic substrates are used at the next stage of the project.