{"title":"GaAs/AlAs超晶格高亚带的光致发光","authors":"C. Domoto, N. Ohtani, P. Vaccaro","doi":"10.1109/COMMAD.1998.791677","DOIUrl":null,"url":null,"abstract":"We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoluminescence from higher-subbands of GaAs/AlAs superlattices\",\"authors\":\"C. Domoto, N. Ohtani, P. Vaccaro\",\"doi\":\"10.1109/COMMAD.1998.791677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoluminescence from higher-subbands of GaAs/AlAs superlattices
We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.