GaAs/AlAs超晶格高亚带的光致发光

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791677

C. Domoto, N. Ohtani, P. Vaccaro

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引用次数: 0

摘要

我们从GaAs/AlAs超晶格(SLs)的高亚带观察到光致发光(PL)。由于/spl Gamma/1(+1)-/spl Gamma/3(0)和X1(+1/2)-/spl Gamma/3(0)共振，电子被注入到更高的子带。由X1(+1/2)-/spl Gamma/3(0)共振引起的/spl Gamma/3-hh1 PL的强度大约是由/spl Gamma/1(+1)-/spl Gamma/3(0)共振引起的强度的两倍。根据这一发现，限制在AlAs势垒层中的X子带比/spl Gamma/子带更有希望向更高的子带注入一定量的电子，并且我们认为它适合实现简单的量子级联激光器结构。

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Photoluminescence from higher-subbands of GaAs/AlAs superlattices

We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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