金属氧化物基忆阻器的通用模型及其在滤波器中的应用

V. Mladenov, S. Kirilov, Ivan D. Zaykov
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引用次数: 1

摘要

忆阻器是一种新颖而有希望的电子存储元件。它们可能是CMOS元件的潜在替代品。由于其纳米尺寸、低功耗和记忆特性,忆阻器可以应用于人工神经网络、记忆矩阵、可编程模拟和数字方案以及其他电子电路中。本文提出了一种改进的、简单的、快速运行的过渡金属氧化物基忆阻器模型。创建了各自的LTSPICE库模型,并在简单的基于忆阻器的模拟滤波器中进行了有效分析。该模型的运行与记忆元素的主要模式一致。验证了其在忆阻器电子电路中的正确功能和适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A General Model for Metal Oxide-Based Memristors and Application in Filters
Memristors are novel and hopeful electronic memory components. They might be potential substitution of the CMOS elements. Owing to their nano dimensions, low power consumption and memorizing properties, the memristors could be applied in artificial neural networks, memory matrices, programmable analog and digital schemes and other electronic circuits. In this work, a modified and simple, fast operating transition metal oxide-based memristor model is proposed. Its respective LTSPICE library model is created and effectively analyzed in simple memristor-based analog filters. The model’s operation is in agreement with the main patterns of the memristive elements. Its correct functioning and applicability in memristor-based electronic circuits is confirmed.
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