电测量功率GaAs MESFET的峰值通道温度

[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1993-02-02 DOI:10.1109/STHERM.1993.225324

M.Z. Wang, C.Z. Lu, Z. Cheng, Z. Wang, S. Feng, G.Y. Ding, X.X. Li, G. Gao

{"title":"电测量功率GaAs MESFET的峰值通道温度","authors":"M.Z. Wang, C.Z. Lu, Z. Cheng, Z. Wang, S. Feng, G.Y. Ding, X.X. Li, G. Gao","doi":"10.1109/STHERM.1993.225324","DOIUrl":null,"url":null,"abstract":"A method for electrically determining the peak channel temperature of GaAs MESFETs is presented. It is the combination of an electrical technique based on the temperature-sensitive electrical parameter (TSEP) with the numerical simulation approach of A.G. Kokkas's (1974) thermal model. The peak channel temperature, measured electrically, is slightly higher than the maximum temperature obtained by the IR method. The effect of the resolution on the precision of the measurement technique is numerically analyzed. The electrical technique is not only shown to have advantages such as nondestructiveness, low cost, and easy operation, but also exhibits no limitation on the spatial resolution and higher accuracy.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Electrically measuring the peak channel temperature of power GaAs MESFET\",\"authors\":\"M.Z. Wang, C.Z. Lu, Z. Cheng, Z. Wang, S. Feng, G.Y. Ding, X.X. Li, G. Gao\",\"doi\":\"10.1109/STHERM.1993.225324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method for electrically determining the peak channel temperature of GaAs MESFETs is presented. It is the combination of an electrical technique based on the temperature-sensitive electrical parameter (TSEP) with the numerical simulation approach of A.G. Kokkas's (1974) thermal model. The peak channel temperature, measured electrically, is slightly higher than the maximum temperature obtained by the IR method. The effect of the resolution on the precision of the measurement technique is numerically analyzed. The electrical technique is not only shown to have advantages such as nondestructiveness, low cost, and easy operation, but also exhibits no limitation on the spatial resolution and higher accuracy.<<ETX>>\",\"PeriodicalId\":369022,\"journal\":{\"name\":\"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-02-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.1993.225324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.1993.225324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

提出了一种测定GaAs mesfet峰值通道温度的方法。它是基于温度敏感电参数(TSEP)的电学技术与A.G. Kokkas(1974)热模型的数值模拟方法的结合。电测的通道峰值温度略高于红外法测得的最高温度。数值分析了分辨率对测量技术精度的影响。该技术不仅具有无损、成本低、操作方便等优点，而且在空间分辨率上不受限制，具有较高的精度。

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Electrically measuring the peak channel temperature of power GaAs MESFET

A method for electrically determining the peak channel temperature of GaAs MESFETs is presented. It is the combination of an electrical technique based on the temperature-sensitive electrical parameter (TSEP) with the numerical simulation approach of A.G. Kokkas's (1974) thermal model. The peak channel temperature, measured electrically, is slightly higher than the maximum temperature obtained by the IR method. The effect of the resolution on the precision of the measurement technique is numerically analyzed. The electrical technique is not only shown to have advantages such as nondestructiveness, low cost, and easy operation, but also exhibits no limitation on the spatial resolution and higher accuracy.<>

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[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium

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