桥式变换器中利用mosfet实现igbt的软开关

Y. Jiang, G. Hua, E. Yang, F. Lee
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引用次数: 42

摘要

对于大功率开关电源变换器,igbt由于更低的导通损耗和更低的成本而比mosfet更具吸引力。然而,igbt的导通和关断缓慢的特性,特别是关断电流尾,造成了严重的开关损耗,从而限制了开关频率。提出了几种利用快速开关mosfet实现igbt软开关的桥式变换器。实验结果验证了该方案的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Soft-switching of IGBTs with the help of MOSFETs in bridge-type converters
For high power switching power converters, IGBTs are more attractive than MOSFETs due to the lower conduction losses and lower cost. However, the slow turn-on and turn-off characteristics, especially the turn-off current tail of the IGBTs, cause severe switching losses, thus limiting the switching frequency. Several bridge-type converters which achieve soft-switching of IGBTs with the help of the fast-switching MOSFETs are proposed. Experimental results have verified the effectiveness of this scheme.<>
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