电容耦合射频放电中电子温度和功率吸收的动力学

S. Wilczek, J. Schulze, R. Brinkmann, Z. Donkó, J. Trieschmann, T. Mussenbrock
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引用次数: 0

摘要

在低压(\ mathm {p} < 10\ \text{Pa})电容耦合射频(CCRF)放电中,溅射、蚀刻和等离子体增强化学气相沉积等工艺过程的优化需要对电子动力学有基本的了解。这是因为具有特定能量阈值的电子,例如电离能,负责正离子和自由基的产生。因此,低压CCRF放电中最重要的两个问题是,电子在一个射频周期内如何获得和失去能量,以及典型的电子温度是多少?
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamics of the Electron Temperature and Power Absorption in Capacitively Coupled Radio Frequency Discharges
In low pressure $(\mathrm{p} < 10\ \text{Pa})$ capacitively coupled radio frequency (CCRF) discharges, the optimization of technological processes, such as sputtering, etching and plasma enhanced chemical vapor deposition requires an essential understanding of the electron dynamics. This is because electrons with a specific energy threshold, e.g., ionization energy, are responsible for the generation of positive ions and radicals. Therefore, the two most important questions in low pressure CCRF discharges are, how do the electrons gain and loss their energy during one radio frequency cycle1 and what is a typical electron temperature?
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