{"title":"有机电化学晶体管的Verilog-A建模","authors":"P. Sideris, S. Siskos, G. Malliaras","doi":"10.1109/MOCAST.2017.7937645","DOIUrl":null,"url":null,"abstract":"An Organic Electrochemical Transistor model written in Verilog-A, a high level analog hardware description language, is presented. Using a polynomial approximation of the transistor DC characteristics, various phenomena in the operation of the device could be modeled. The error between experimental and simulated data was estimated very low for all cases of the simulated results. The model was imported in HSPICE and several test circuits were simulated.","PeriodicalId":202381,"journal":{"name":"2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Verilog-A modeling of Organic Electrochemical Transistors\",\"authors\":\"P. Sideris, S. Siskos, G. Malliaras\",\"doi\":\"10.1109/MOCAST.2017.7937645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An Organic Electrochemical Transistor model written in Verilog-A, a high level analog hardware description language, is presented. Using a polynomial approximation of the transistor DC characteristics, various phenomena in the operation of the device could be modeled. The error between experimental and simulated data was estimated very low for all cases of the simulated results. The model was imported in HSPICE and several test circuits were simulated.\",\"PeriodicalId\":202381,\"journal\":{\"name\":\"2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MOCAST.2017.7937645\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MOCAST.2017.7937645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Verilog-A modeling of Organic Electrochemical Transistors
An Organic Electrochemical Transistor model written in Verilog-A, a high level analog hardware description language, is presented. Using a polynomial approximation of the transistor DC characteristics, various phenomena in the operation of the device could be modeled. The error between experimental and simulated data was estimated very low for all cases of the simulated results. The model was imported in HSPICE and several test circuits were simulated.