用器件矩阵法设计静态电流模拟器

D. Bharti, Abhijit R. Asati
{"title":"用器件矩阵法设计静态电流模拟器","authors":"D. Bharti, Abhijit R. Asati","doi":"10.1109/ISED.2012.38","DOIUrl":null,"url":null,"abstract":"I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.","PeriodicalId":276803,"journal":{"name":"2012 International Symposium on Electronic System Design (ISED)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a Static Current Simulator Using Device Matrix Approach\",\"authors\":\"D. Bharti, Abhijit R. Asati\",\"doi\":\"10.1109/ISED.2012.38\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.\",\"PeriodicalId\":276803,\"journal\":{\"name\":\"2012 International Symposium on Electronic System Design (ISED)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Symposium on Electronic System Design (ISED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISED.2012.38\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Symposium on Electronic System Design (ISED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISED.2012.38","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

I-V特性是器件模拟器产生的重要结果之一。在本文中,提出了一种新的基于交互矩阵的算法,以二维或三维方式绘制器件结构,并绘制用户指定掺杂和偏置条件下器件的I-V特性。算法根据用户提出的设备描述,生成设备的二维或三维矩阵。该器件矩阵经历了许多不同的运算,并进行了各种数学计算,利用这些计算绘制了I-V特性。这种方法为基本设备级工具开发提供了一种新的思路。学生和设备级工程师可以发现这项工作很有用,它为他们提供了一种交互式和即时的方式来绘制设备的I-V特性。算法的实现是模块化的,基于矩阵,使用MATLAB®完成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a Static Current Simulator Using Device Matrix Approach
I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.
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