利用延迟变化减少NAND快闪记忆体存取冲突

Jinhua Cui, Weiguo Wu, Xingjun Zhang, Jianhang Huang, Yinfeng Wang
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引用次数: 12

摘要

与机械硬盘相比,NAND闪存具有更高的读写性能和更低的功耗,在存储系统中得到了广泛的应用。最近,为了提高I/O性能,在耐久性、写速度和读速度之间进行了许多权衡,这也导致了读/写延迟的变化。本文利用时延变化在I/O调度中实现访问特性引导下的读写时延最小化。首先,在了解读时延、写时延和原始比特误码率(RBER)之间关系的基础上,讨论了利用这种关系降低读写时延的不同方法。在此基础上,提出了一种基于访问数据热度和保留时间来确定读写速度的I/O调度方案,优先考虑快速读写以减少冲突。各种轨迹的实验表明,该技术取得了显著的读写性能提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploiting latency variation for access conflict reduction of NAND flash memory
NAND flash memory has been widely used in storage systems by offering greater read/write performance and lower power consumption than mechanical hard drives. Recently, the tradeoff between endurance, write speed, and read speed has been exploited from many ways for I/O performance improvement, which also induce the read/write latency variation. In this paper, the latency variation is exploited in I/O scheduling for access characteristic guided read and write latency minimization. First, with the understanding of the relationship among read latency, write latency and raw bit error rates (RBER), different ways to exploit the relationship for read and write latency reduction is discussed. Then, an I/O scheduling scheme is proposed by using hotness and retention age of accessed data to determine the speed of writes or reads, giving scheduling priority to fast writes and fast reads for conflict reduction. Experiments with various traces reveal that the proposed technique achieves significant read and write performance improvements.
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