在$0.13\mu\ mathm {m}$ SiGe BiCMOS工艺中紧凑的双向K和Ka波段SPDT

Haoyi Dong, Jixin Chen, Debin Hou, Yu Xiang, W. Hong
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引用次数: 2

摘要

本文提出了一种0.13\mu\ mathm {m}$ BICMOS技术的紧凑对称单极双掷开关(SPDT)。通过用集总元件取代传统的四分之一波传输线,设计的开关在紧凑的尺寸下实现了1.5dB的插入损耗和26GHz的21 dB隔离。SPDT的直流功耗极低,具有良好的功率处理能力,其输入P1dB大于17 dBm。该开关还可以作为双极单掷开关(DPST),证明了其双向功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Compact Bi-directional K and Ka Band SPDT in $0.13\mu\mathrm{m}$ SiGe BiCMOS Process
This paper proposes a compact symmetrical single pole double throw switch (SPDT) in $0.13\mu\mathrm{m}$ BICMOS technology. By replacing the traditional quarter-wave transmission line with lumped components, the designed switch achieves 1.5dB insertion loss and 21 dB isolation at 26GHz within a compact size. Consuming very low DC power consumption, the SPDT exhibits good power handling capability and its input P1dB is larger than 17 dBm. The proposed switch could also perform as double pole single throw switch (DPST), which proves its bidirectional function.
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