{"title":"一种新型8端口存储单元的设计","authors":"Jian Chang, K. Man, E. Lim","doi":"10.1109/SOCDC.2010.5682876","DOIUrl":null,"url":null,"abstract":"A general procedure to calculate the stability of the multiport memory cell is proposed. Noise margins of the 4-port and 8-port SRAM cell are studied. A novel 8-port memory cell is proposed to reduce the read access time.","PeriodicalId":380183,"journal":{"name":"2010 International SoC Design Conference","volume":"7 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a novel 8-port memory cell\",\"authors\":\"Jian Chang, K. Man, E. Lim\",\"doi\":\"10.1109/SOCDC.2010.5682876\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A general procedure to calculate the stability of the multiport memory cell is proposed. Noise margins of the 4-port and 8-port SRAM cell are studied. A novel 8-port memory cell is proposed to reduce the read access time.\",\"PeriodicalId\":380183,\"journal\":{\"name\":\"2010 International SoC Design Conference\",\"volume\":\"7 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2010.5682876\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2010.5682876","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A general procedure to calculate the stability of the multiport memory cell is proposed. Noise margins of the 4-port and 8-port SRAM cell are studied. A novel 8-port memory cell is proposed to reduce the read access time.
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