{"title":"一种体积小、带宽为1ghz的c波段GaAs Doherty功率放大器MMIC","authors":"Guansheng Lv, Wen-hua Chen, Zhenghe Feng","doi":"10.1109/IMWS-5G.2018.8484553","DOIUrl":null,"url":null,"abstract":"This paper presents a fully integrated C-band Doherty power amplifier (DPA) in 0.25-um GaAs pHEMT process. The inductive component number and inductance values in the output network of the DPA are minimized, which reduces the chip size significantly. The input matching is optimized in the large signal region for both main power amplifier (PA) and auxiliary PA to achieve higher efficiency and output power. The performance of DPA is enhanced by using an uneven input splitter to deliver more power to main PA. The fabricated DPA exhibits a bandwidth of 1 GHz, with the chip area of only 1.8 mm × 2.2 mm. In the frequency range of 4.6 GHz to 5.6 GHz, the DPA realizes a saturation output power of 29.8 dBm – 31 dBm, a peak power-added efficiency (PAE) of 41% – 46%, and a PAE at 6 dB power back-off of 24% – 27%. The small signal gain is higher than 11 dB, in the large bandwidth from 4.5 GHz to 6.2 GHz.","PeriodicalId":408288,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A C-band GaAs Doherty Power Amplifier MMIC with Compact Size and 1-GHz Bandwidth\",\"authors\":\"Guansheng Lv, Wen-hua Chen, Zhenghe Feng\",\"doi\":\"10.1109/IMWS-5G.2018.8484553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a fully integrated C-band Doherty power amplifier (DPA) in 0.25-um GaAs pHEMT process. The inductive component number and inductance values in the output network of the DPA are minimized, which reduces the chip size significantly. The input matching is optimized in the large signal region for both main power amplifier (PA) and auxiliary PA to achieve higher efficiency and output power. The performance of DPA is enhanced by using an uneven input splitter to deliver more power to main PA. The fabricated DPA exhibits a bandwidth of 1 GHz, with the chip area of only 1.8 mm × 2.2 mm. In the frequency range of 4.6 GHz to 5.6 GHz, the DPA realizes a saturation output power of 29.8 dBm – 31 dBm, a peak power-added efficiency (PAE) of 41% – 46%, and a PAE at 6 dB power back-off of 24% – 27%. The small signal gain is higher than 11 dB, in the large bandwidth from 4.5 GHz to 6.2 GHz.\",\"PeriodicalId\":408288,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-5G.2018.8484553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-5G.2018.8484553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A C-band GaAs Doherty Power Amplifier MMIC with Compact Size and 1-GHz Bandwidth
This paper presents a fully integrated C-band Doherty power amplifier (DPA) in 0.25-um GaAs pHEMT process. The inductive component number and inductance values in the output network of the DPA are minimized, which reduces the chip size significantly. The input matching is optimized in the large signal region for both main power amplifier (PA) and auxiliary PA to achieve higher efficiency and output power. The performance of DPA is enhanced by using an uneven input splitter to deliver more power to main PA. The fabricated DPA exhibits a bandwidth of 1 GHz, with the chip area of only 1.8 mm × 2.2 mm. In the frequency range of 4.6 GHz to 5.6 GHz, the DPA realizes a saturation output power of 29.8 dBm – 31 dBm, a peak power-added efficiency (PAE) of 41% – 46%, and a PAE at 6 dB power back-off of 24% – 27%. The small signal gain is higher than 11 dB, in the large bandwidth from 4.5 GHz to 6.2 GHz.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
