T. Quach, P. Watson, W. Okamura, E. Kaneshiro, A. Gutierrez-Aitken, T. Block, J. Eldredge, T. Jenkins, L. Kehias, A. Oki, D. Sawdai, R. Welch, R. Worley
{"title":"用于空间雷达的宽带e类功率放大器","authors":"T. Quach, P. Watson, W. Okamura, E. Kaneshiro, A. Gutierrez-Aitken, T. Block, J. Eldredge, T. Jenkins, L. Kehias, A. Oki, D. Sawdai, R. Welch, R. Worley","doi":"10.1109/GAAS.2001.964380","DOIUrl":null,"url":null,"abstract":"We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a class-E power amplifier at X-band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Broadband class-E power amplifier for space radar application\",\"authors\":\"T. Quach, P. Watson, W. Okamura, E. Kaneshiro, A. Gutierrez-Aitken, T. Block, J. Eldredge, T. Jenkins, L. Kehias, A. Oki, D. Sawdai, R. Welch, R. Worley\",\"doi\":\"10.1109/GAAS.2001.964380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a class-E power amplifier at X-band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband class-E power amplifier for space radar application
We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a class-E power amplifier at X-band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.