{"title":"短路和钳位电感开关的IGBT动力学","authors":"M. Trivedi, K. Shenai","doi":"10.1109/APEC.1998.653981","DOIUrl":null,"url":null,"abstract":"This paper reports and compares the internal dynamics of IGBT under short circuit and clamped inductive switching stress. The performance of IGBTs under short circuit and clamped inductive load conditions has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced mixed device and circuit simulator is employed to study the internal dynamics of latch-up free punch-through IGBT. It is shown that thermally assisted avalanche breakdown of IGBT under the two stress conditions occurs due to localized high temperature generation in different regions of the device.","PeriodicalId":156715,"journal":{"name":"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"IGBT dynamics for short-circuit and clamped inductive switching\",\"authors\":\"M. Trivedi, K. Shenai\",\"doi\":\"10.1109/APEC.1998.653981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports and compares the internal dynamics of IGBT under short circuit and clamped inductive switching stress. The performance of IGBTs under short circuit and clamped inductive load conditions has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced mixed device and circuit simulator is employed to study the internal dynamics of latch-up free punch-through IGBT. It is shown that thermally assisted avalanche breakdown of IGBT under the two stress conditions occurs due to localized high temperature generation in different regions of the device.\",\"PeriodicalId\":156715,\"journal\":{\"name\":\"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1998.653981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1998.653981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
IGBT dynamics for short-circuit and clamped inductive switching
This paper reports and compares the internal dynamics of IGBT under short circuit and clamped inductive switching stress. The performance of IGBTs under short circuit and clamped inductive load conditions has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced mixed device and circuit simulator is employed to study the internal dynamics of latch-up free punch-through IGBT. It is shown that thermally assisted avalanche breakdown of IGBT under the two stress conditions occurs due to localized high temperature generation in different regions of the device.
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