采用3×VDD输入容差的混压I/O缓冲器中仅使用1×VDD低压器件的ESD保护设计

M. Ker, Chang-Tzu Wang
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引用次数: 8

摘要

提出了一种仅使用1倍vdd低压器件用于输入容限为3倍vdd的混合电压I/O缓冲器的新型静电放电保护设计。提出了一种特殊的ESD检测电路,通过衬底触发技术提高ESD钳位器件的ESD保护效率,达到较高的ESD水平。该设计已在0.13 μ m CMOS工艺中成功验证,为具有3倍vdd输入容限的混合电压I/O缓冲器中的片上ESD保护提供了出色的电路解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ESD Protection Design by Using Only 1×VDD Low-Voltage Devices for Mixed-Voltage I/O Buffers with 3×VDD Input Tolerance
A new electrostatic discharge (ESD) protection design by using only 1timesVDD low-voltage devices for mixed-voltage I/O buffer with 3timesVDD input tolerance is proposed. A special ESD detection circuit has been proposed to improve ESD protection efficiency of ESD clamp device by substrate-triggered technique to achieve high ESD level. This design has been successfully verified in a 0.13-mum CMOS process to provide an excellent circuit solution for on-chip ESD protection in the mixed-voltage I/O buffers with 3timesVDD input tolerance.
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