气源MBE生长具有AlIn/sub - 1-x/P肖特基势垒层的inp基hemt

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328259

J.J. Brown, M. Matloubian, T.K. Liu, L.M. Jelloian, A. Schmitz, R. G. Wilson, M. Lui, L. Larson, M. Melendes, M. Thompson

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引用次数: 4

摘要

我们报告了一类新的基于inp的hemt的性能，其中传统的Al/sub x/ in /sub 1-x/As肖特基势垒层被Al/sub x/ in /sub 1-x/P取代。替代肖特基势垒设计的研究旨在提高基于inp的hemt的性能，用于需要高击穿电压的应用，如微波功率放大器。据报道，GaAs mesfet和hemt的典型低栅漏击穿电压(BV/sub gd/)为20 V。此外，Al浓度的增加可能会限制器件的可靠性和成品率，因为栅极金属与富Al层的附着力较差。含磷材料是具有低铝含量的宽带隙肖特基层设计的有吸引力的候选材料。本文报道了一种具有Al/sub 0.52/In/sub 0.48/P势垒层的准晶gaas基HEMT，其BV/sub gd/分别为-17 V和-10 V，用于1.0和0.1 /spl μ /m栅极器件。最近，一种Al/sub 0.2/In/sub 0.8/P势垒的假晶通道InP HEMT被报道，BV/sub gd/=-15 V，栅极长度为0.5 /spl mu/m。在本文中，我们首次提出了Al/sub x/In/sub 1-x/P/AlInAs/GaInAs HEMT的性能，其中通道与InP衬底晶格匹配。我们将这种新器件的性能与Al/sub 0.6/In/sub 0.4/As/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0进行了比较。/$ d5/ sub3 /As HMT来说明使用AlInP阻挡层改进的器件特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP-based HEMTs with AlIn/sub 1-x/P Schottky barrier layers grown by gas-source MBE

We report on the performance of a new class of InP-based HEMTs in which the conventional Al/sub x/In/sub 1-x/As Schottky barrier layer is replaced with Al/sub x/In/sub 1-x/P. The study of alternative Schottky barrier designs is aimed at improving the performance of InP-based HEMTs for applications that require high breakdown voltages, such as microwave power amplifiers. The typical low gate-to-drain breakdown voltage (BV/sub gd/) of <-5 V reported for Al/sub 0.48/In/sub 0.52/As/GaInPLs HEMTs limits the device performance for high power applications. A significant research effort has concentrated on improving BV/sub gd/ by increasing the aluminum concentration in the AlInAs layer. An increase in BV/sub gd/ from -5 V to -10 V has been achieved in our laboratory by increasing the aluminum concentration in the Al/sub x/In/sub 1-x/As Schottky layer from x=0.48 to x=0.70. Other researchers have reported BV/sub gd/ as high as -13 V for an In/sub 0.4/Al/sub 0.6/As/n+-InGaAs HFET with a gate length of 1.9 /spl mu/m. These breakdown voltages are, however, still much lower than typical values of BV/sub gd/>20 V reported for GaAs MESFETs and HEMTs. In addition, the increased Al concentration may limit both device reliability and yield due to poor gate metal adhesion to the Al-rich layer. Phosphorous containing materials are an attractive candidate for a wide bandgap Schottky layer design with low aluminum content. A pseudomorphic GaAs-based HEMT with Al/sub 0.52/In/sub 0.48/P barrier layer has been reported with BV/sub gd/ of -17 V and -10 V for 1.0 and 0.1 /spl mu/m long gate devices, respectively. More recently, a pseudomorphic channel InP HEMT with an Al/sub 0.2/In/sub 0.8/P barrier was reported with a BV/sub gd/=-15 V for a gate length of 0.5 /spl mu/m. In this paper, we present for the first time the performance of a Al/sub x/In/sub 1-x/P/AlInAs/GaInAs HEMT in which the channel is lattice matched to the InP substrate. We compare the performance of this new device with an Al/sub 0.6/In/sub 0.4/As/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0./$ d5/sub 3/As HMT to illustrate the improved device characteristics with the AlInP barrier layer.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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