用于新一代蓝牙应用的2.4GHz SOI CMOS功率放大器

2022 7th International Conference on Communication, Image and Signal Processing (CCISP) Pub Date : 2022-11-01 DOI:10.1109/CCISP55629.2022.9974559

Ying Ruan, Lei Chen, Fang Yang

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引用次数: 1

摘要

采用22nm硅绝缘体(SOI) CMOS技术，设计并实现了一款适用于新一代低功耗蓝牙应用的2.4GHz E类功率放大器。所提出的PA是完全集成的，采用级联堆叠功率晶体管的两级差分结构，在几乎不增加芯片面积的情况下提高了效率并防止了击穿。S参数仿真结果表明，在2.4GHz ~ 2.5GHz频率范围内，与S22匹配的输出阻抗小于- 12.1dB。该功率放大器的功率增益为15.9dB，输出功率为4.9dBm，功率附加效率(PAE)为41.5%。

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A 2.4GHz SOI CMOS Power Amplifier for New Generation Bluetooth Application

A 2.4GHz class E power amplifier (PA) for new generation Bluetooth Low Energy application is designed and implemented in 22nm silicon on insulator (SOI) CMOS technology. The proposed PA is fully integrated, which has a two-stage differential structure with cascode stacking power transistors to improve the efficiency and prevent the breakdown with almost no increase in die area. S parameter simulation results show that output impedance matching S22 is less than - 12.1dB in the frequency range from 2.4GHz to 2.5GHz. The power amplifier achieves a power gain of 15.9dB, output power of 4.9dBm, and a power added efficiency(PAE) of 41.5%.

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2022 7th International Conference on Communication, Image and Signal Processing (CCISP)

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