用于高生存度接收器电子器件的宽带AlGaN/GaN HEMT低噪声放大器

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1339093

S. Cha, Y.H. Chung, M. Wojtowwicz, I. Smorchkova, B. Allen, J.M. Yang, R. Kagiwada

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引用次数: 52

摘要

氮化镓已成为下一代高功率电子器件的首选技术。然而，其处理高功率的能力也使其成为高生存能力接收器组件的完美技术候选人。这具有明显的成本效益，因为LNA的占地面积将更小，因为不需要额外的前端保护电路。本文设计并制造了一种采用新型双栅拓扑结构的宽带氮化镓HEMT低噪声放大器MMIC，以展示氮化镓的低噪声性能。

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Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics

Gallium Nitride has emerged as the technology of choice for the next generation high power electronics. However, its ability to handling high power also makes it the perfect technology candidate for highly survivable receiver components. This has obvious cost benefit for the footprint of the LNA will be smaller since no extra front-end protection circuitry is required. In this paper, a wideband Gallium Nitride HEMT low noise amplifier MMIC, using novel dual gate topology, has been design and manufactured to demonstrate Gallium Nitride low noise capability.

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来源期刊

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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