J.K. Kim, E. Hall, S. Nakagawa, A. Huntington, L. Coldren
{"title":"双极级联1.55 /spl mu/m vcsel, >.1差分量子效率和连续波操作","authors":"J.K. Kim, E. Hall, S. Nakagawa, A. Huntington, L. Coldren","doi":"10.1109/ISLC.2000.882334","DOIUrl":null,"url":null,"abstract":"We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Bipolar cascade 1.55 /spl mu/m VCSELs with >1 differential quantum efficiency and CW operation\",\"authors\":\"J.K. Kim, E. Hall, S. Nakagawa, A. Huntington, L. Coldren\",\"doi\":\"10.1109/ISLC.2000.882334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bipolar cascade 1.55 /spl mu/m VCSELs with >1 differential quantum efficiency and CW operation
We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.