Arbitrary Alloy Semiconductor Material Based DG MOSFET for High-Frequency Industrial and Hybrid Consumer Applications

The performance of the transistors is a measure for the system to perform desired output. The research in the development of transistors is continuously growing and defines an efficient system and device modeling. This work shows a comparative analysis of the various materials in the double-gate (DG) MOSFET. Here, the DG MOSFETs have been constructed using high-ƙ dielectrics to reduce the short channel effects and improve the performance of the transistors, which is the unit cell of the industrial and consumer electronics devices. This MOSFET can further be optimized by enhancing the analog characteristics in the nanometer regime. This work focuses on the performance of the DG MOSFETs by considering channels like Indium Arsenide (InAs) and Indium Phosphide (InP) in the Aluminium Gallium Arsenide (AlxGa1-xAs) and Gallium Arsenide Antimonide (GaAs1-xSbx) substrates. From the simulation and tabulations, it is evident that the properties of the DG MOSFETs with these novel materials change drastically, thereby inferring the optimum materials in MOSFETs for the high speed and long haul RF applications. In this work, three different models have been proposed, namely AlxGa1-xAs/HfO2, AlxGa1-xAs/La2O3, and GaAs1-xSbx/La2O3; which shows improvement in threshold voltage with 1.16%, 1.20%, and 1.64% respectively when compared to the conventional Silicon-based DG MOSFETs.