横向egts在SOI上大电流性能的实验验证

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509457

N. Yasuhara, H. Funaki, T. Matsudai, A. Nakagawa

{"title":"横向egts在SOI上大电流性能的实验验证","authors":"N. Yasuhara, H. Funaki, T. Matsudai, A. Nakagawa","doi":"10.1109/ISPSD.1996.509457","DOIUrl":null,"url":null,"abstract":"This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Experimental verification of large current capability of lateral IEGTs on SOI\",\"authors\":\"N. Yasuhara, H. Funaki, T. Matsudai, A. Nakagawa\",\"doi\":\"10.1109/ISPSD.1996.509457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

本文首次报道了SOI上侧向注入增强绝缘栅双极晶体管(LIEGTs)的电学特性。结果表明，优化后的liegt具有两倍于light的电流能力，并具有相同的关断特性。这些结果表明，LIEGTs作为高压功率集成电路的输出器件是有吸引力的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Experimental verification of large current capability of lateral IEGTs on SOI

This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

自引率

0.00%

发文量