基于40纳米节点CMOS工艺的超fme硅光子学制造技术

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 1900-01-01 DOI:10.1109/group4.2015.7305911

T. Horikawa, T. Mogami

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引用次数: 0

摘要

综述了基于40纳米节点CMOS技术的硅光子器件尺寸控制技术。采用ArF浸没光刻技术制备的解复用器在谐振波长(σλ)上具有较高的再现性。在c波段的TE单模传播中，在硅丝波导中实现了<;1 nm)和极低的传播损耗<;0.5 dB/cm。

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Ultra-fme Si photonics fabrication technology based on 40-nm-node CMOS process

The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <;1 nm) was achieved, as well as extremely low propagation loss <;0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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